NTE2590 Silicon NPN Transistor High Voltage Amp/Switch
Features: D High Breakdown Voltage, High Reliability D Low Output Capacitance D Wide ASO Range Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) Test Conditions VCB = 900V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC =2mA VCE = 10V, IC = 2mA VCB = 100V, f = 1MHz IC = 5mA, IB = 1mA IC =5A, IB = 1mA Min - - 20 - - - - 1700 900 5 Typ - - 50 6 2.0 - - - - - Max 1.0 1.0 120 - - 5 2 - - - MHz pF V V V V V Unit A A
Collector Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 V(BR)CEO IC = 1mA, RBE = V(BR)EBO IE = 1mA, IC = 0
.402 (10.2)
.035 (0.9)
.177 (4.5) .051 (1.3)
.346 (8.8) B C E
.433 (11.0) .019 (0.5)
.100 (2.54)
|
